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| SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W SW4N60 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and high efficiency switch mode power supplies. D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25) Continuous Drain Current (@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 4 3.0 16 30 260 7.3 4.5 73 0.85 -55~+150 300 Units V A A A V mJ mJ V/ns W W/ Thermal Characteristics Value Symbol R R R JC CS JA Units Max 1.72 62.5 / W / W / W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ 0.5 - 1/6 REV0.1 04.10.15 SAMWIN Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ Tj IDSS Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VGS=0V,ID=250uA ID=250uA,referenced to 25 VDS=600V, VGS=0V VDS=480V, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 600 (Tc=25 unless otherwise noted) SW4N60 Value Test Conditions Min Typ Max Units Parameter 0.6 - V V/ - - 1 100 -100 uA nA nA On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS,ID=250uA VGS=10V,ID=2.0A 2.0 1.9 4.0 2.2 V ohm Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz 670 90 11 pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time (Note4,5) Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDS=480V,VGS=10V, ID=4.0A (Note4,5) 20 5 7 74 30 nc VDD=300V,ID=4.0A RG=50ohm 60 94 ns 140 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET G D Min. - Typ. 250 1.5 Max. 4.0 16.0 1.4 - Unit. A IS=1.0A,VGS=0V IS=1.0A,V GS=0V, dIF/dt=100A/us S s V ns uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=30mH,IAS=4.0A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD1.8A,di/dt100A/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 2/6 REV0.1 04.10.15 SAMWIN SW4N60 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics (Non-Repetitive) 3/6 Fig 6. Gate Charge Characteristics REV0.1 04.10.15 SAMWIN SW4N60 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature Fig 11. Transient Thermal Response Curve 4/6 REV0.1 04.10.15 SAMWIN Same Type as DUT 300nF SW4N60 VGS 10V 200nF 50K Qg Qgs Qgd VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) VDS 90% 10V Pulse Generator RG DUT Vin 10% tf td(off) td(on) tr ton toff Fig 13. Switching test Circuit & Waveforms L VDS VDD BVDSS RG DUT 10V IAS VDD 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD ID(t) VDS(t) tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.1 04.10.15 SAMWIN DUT SW4N60 + VDS __ L Driver RG Same Type as DUT VDD VGS dv/dt controlled by RG Is controlled by pulse period VGS (Driver) Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Vf di/dt Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.1 04.10.15 |
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